NVMFD5877NL Todos los transistores

NVMFD5877NL MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 39 mW, 17 A http //onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 39 mW @ 10 V NVMFD5877NLWF - Wettable Flanks Option for Enhanced Optical 60 V 17 A Inspection 60 mW @ 4.5 V AEC-Q101 Qualified and PPAP Cap

NVMFD5873NL Power MOSFET 60 V, 13 mW, 58 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5873NLWF - Wettable Flanks Option for Enhanced Optical 13 mW @ 10 V Inspection 60 V 58 A 16.5

NVMFD5875NL MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V NVMFD5875NLWF - Wettable Flanks Option for Enhanced Optical 60 V 22 A 45 mW @ 4.5 V Inspection AEC-Q101 Qualified and PPAP Capabl

NVMFD5853N, NVMFD5853NWF Power MOSFET 40 V, 10 mW, 53 A, Dual N-Channel, Dual SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product 40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

NVMFD5853N, NVMFD5853NWF MOSFET Dual N-Channel, Dual SO-8FL 40 V, 10 mW, 53 A http //onsemi.com Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable

NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical 6.9 mW @ 10 V Inspection 40 V 44 A

NVMFD5853NL Power MOSFET 40 V, 10 mW, 34 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical 10 mW @ 10 V Inspection 40 V 34 A A