NVTFS5811NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NVTFS5811NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 21 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm
Paquete / Cubierta: WDFN8

Búsqueda de reemplazo de MOSFET NVTFS5811NL

NVTFS5811NL Datasheet (PDF)

..1. Size:190K onsemi
nvtfs5811nl.pdf

NVTFS5811NLMOSFET Power, SingleN-Channel40 V, 6.7 mW, 40 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V40 V 40 A These

0.1. Size:112K onsemi
nvtfs5811nl-d.pdf

NVTFS5811NLPower MOSFET40 V, 6.7 mW, 40 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-

7.1. Size:111K onsemi
nvtfs5826nl-d.pdf

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-F

7.2. Size:119K onsemi
nvtfs5826nl.pdf

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable24 mW @ 10 V These Devices are Pb-F

7.3. Size:116K onsemi
nvtfs5820nl-d.pdf

NVTFS5820NLPower MOSFET60 V, 11.5 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices*11.5 mW @ 10 V60 V 29 AMAXIMUM RATINGS (TJ = 25C unless o

Otros transistores... NVD5865NL , NVD5867NL , NVD5890N , NVMFD5877NL , NVMFS4841N , NVTFS4823N , NVTFS4824N , NVTFS5116PL , AO4468 , NVTFS5820NL , NVTFS5826NL , SCH1330 , SCH1331 , SCH1332 , SCH1334 , SCH1335 , SCH1337 .

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