Справочник MOSFET. NVTFS5811NL

 

NVTFS5811NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVTFS5811NL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 21 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Qgⓘ - Общий заряд затвора: 30 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0067 Ohm
   Тип корпуса: WDFN8

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NVTFS5811NL Datasheet (PDF)

 ..1. Size:190K  onsemi
 nvtfs5811nl.pdf

NVTFS5811NL NVTFS5811NL

NVTFS5811NLMOSFET Power, SingleN-Channel40 V, 6.7 mW, 40 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V40 V 40 A These

 0.1. Size:112K  onsemi
 nvtfs5811nl-d.pdf

NVTFS5811NL NVTFS5811NL

NVTFS5811NLPower MOSFET40 V, 6.7 mW, 40 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-

 7.1. Size:111K  onsemi
 nvtfs5826nl-d.pdf

NVTFS5811NL NVTFS5811NL

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-F

 7.2. Size:119K  onsemi
 nvtfs5826nl.pdf

NVTFS5811NL NVTFS5811NL

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable24 mW @ 10 V These Devices are Pb-F

 7.3. Size:116K  onsemi
 nvtfs5820nl-d.pdf

NVTFS5811NL NVTFS5811NL

NVTFS5820NLPower MOSFET60 V, 11.5 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices*11.5 mW @ 10 V60 V 29 AMAXIMUM RATINGS (TJ = 25C unless o

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