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FDPF045N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF045N10A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 67 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO220F
 

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FDPF045N10A Datasheet (PDF)

 ..1. Size:416K  fairchild semi
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FDPF045N10A

August 2014FDPF045N10AN-Channel PowerTrench MOSFET 100 V, 67 A, 4.5 mFeatures Description RDS(on) = 3.7 m ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching performance.

 ..2. Size:524K  onsemi
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FDPF045N10A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:274K  inchange semiconductor
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FDPF045N10A

isc N-Channel MOSFET Transistor FDPF045N10AFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

 8.1. Size:393K  fairchild semi
fdpf041n06bl1.pdf pdf_icon

FDPF045N10A

December 2014FDPF041N06BL1N-Channel PowerTrench MOSFET 60 V, 77 A, 4.1 mFeatures Description RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 77 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on)*QGlored to minimize the on-state resistance while maintaining superior switching performa

Otros transistores... TF252 , TF252TH , TF256 , TF256TH , WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , IRFB4115 , FMD15-06KC5 , FDMS8672S , FMD21-05QC , FMD40-06KC , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F .

 

 
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