FDPF045N10A datasheet, подбор замены

 ..1. Size:416K  fairchild semi
 fdpf045n10a.pdf 

August 2014 FDPF045N10A N-Channel PowerTrench MOSFET 100 V, 67 A, 4.5 m Features Description RDS(on) = 3.7 m ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance.

 ..2. Size:524K  onsemi
 fdpf045n10a.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:274K  inchange semiconductor
 fdpf045n10a.pdf 

isc N-Channel MOSFET Transistor FDPF045N10A FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 4.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =

 8.1. Size:393K  fairchild semi
 fdpf041n06bl1.pdf 

December 2014 FDPF041N06BL1 N-Channel PowerTrench MOSFET 60 V, 77 A, 4.1 m Features Description RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 77 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on)*QG lored to minimize the on-state resistance while maintaining superior switching performa

 9.1. Size:592K  fairchild semi
 fdpf085n10a.pdf 

November 2013 FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 m Features Description RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge, QG = 31 nC

 9.2. Size:275K  inchange semiconductor
 fdpf085n10a.pdf 

isc N-Channel MOSFET Transistor FDPF085N10A FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 8.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =