Справочник MOSFET. FDPF045N10A

 

FDPF045N10A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDPF045N10A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 43 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 67 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 57 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FDPF045N10A

 

 

FDPF045N10A Datasheet (PDF)

 ..1. Size:416K  fairchild semi
 fdpf045n10a.pdf

FDPF045N10A FDPF045N10A

August 2014FDPF045N10AN-Channel PowerTrench MOSFET 100 V, 67 A, 4.5 mFeatures Description RDS(on) = 3.7 m ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching performance.

 ..2. Size:524K  onsemi
 fdpf045n10a.pdf

FDPF045N10A FDPF045N10A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:274K  inchange semiconductor
 fdpf045n10a.pdf

FDPF045N10A FDPF045N10A

isc N-Channel MOSFET Transistor FDPF045N10AFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

 8.1. Size:393K  fairchild semi
 fdpf041n06bl1.pdf

FDPF045N10A FDPF045N10A

December 2014FDPF041N06BL1N-Channel PowerTrench MOSFET 60 V, 77 A, 4.1 mFeatures Description RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 77 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on)*QGlored to minimize the on-state resistance while maintaining superior switching performa

 9.1. Size:592K  fairchild semi
 fdpf085n10a.pdf

FDPF045N10A FDPF045N10A

November 2013FDPF085N10AN-Channel PowerTrench MOSFET100 V, 40 A, 8.5 mFeatures Description RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintaining Low Gate Charge, QG = 31 nC

 9.2. Size:275K  inchange semiconductor
 fdpf085n10a.pdf

FDPF045N10A FDPF045N10A

isc N-Channel MOSFET Transistor FDPF085N10AFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 8.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

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