2SK985 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK985
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Paquete / Cubierta: TO220F
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2SK985 Datasheet (PDF)
2sk981 2sk981a.pdf

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
2sk982.pdf

2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit: mmAnalog Switch Applications Interface Applications Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = 50 mA D Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode
2sk987.pdf

isc N-Channel MOSFET Transistor 2SK987DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 5
Otros transistores... 2SK973L , 2SK973S , 2SK974L , 2SK974S , 2SK975 , 2SK979 , 2SK981 , 2SK981A , IRF840 , 2SK987 , 2SK988 , 2SK989 , 2SK990 , 2SK991 , 2SK992 , 2SK993 , 2SK994 .
History: RSS090P03 | CS8205A | BRI3N80
History: RSS090P03 | CS8205A | BRI3N80



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