2SK985 Todos los transistores

 9.1. Size:97K  1
 2sk987 2sk988 2sk989 2sk990 2sk993 2sk994 2sk997 2sk998.pdf

 9.2. Size:260K  1
 2sk981 2sk981a.pdf

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

 9.3. Size:142K  toshiba
 2sk982.pdf

2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode

 9.4. Size:200K  inchange semiconductor
 2sk987.pdf

isc N-Channel MOSFET Transistor 2SK987 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 5

 9.5. Size:200K  inchange semiconductor
 2sk988.pdf

isc N-Channel MOSFET Transistor 2SK988 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)