2SK985 Todos los transistores

 

2SK985 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK985
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 900 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Resistencia entre drenaje y fuente RDS(on): 7.5 Ohm
   Paquete / Cubierta: TO220F

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2SK985 Datasheet (PDF)

 9.2. Size:260K  1
2sk981 2sk981a.pdf

2SK985
2SK985

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

 9.3. Size:142K  toshiba
2sk982.pdf

2SK985
2SK985

2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit: mmAnalog Switch Applications Interface Applications Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = 50 mA D Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode

 9.4. Size:200K  inchange semiconductor
2sk987.pdf

2SK985
2SK985

isc N-Channel MOSFET Transistor 2SK987DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 5

 9.5. Size:200K  inchange semiconductor
2sk988.pdf

2SK985
2SK985

isc N-Channel MOSFET Transistor 2SK988DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

Otros transistores... 2SK973L , 2SK973S , 2SK974L , 2SK974S , 2SK975 , 2SK979 , 2SK981 , 2SK981A , 50N06 , 2SK987 , 2SK988 , 2SK989 , 2SK990 , 2SK991 , 2SK992 , 2SK993 , 2SK994 .

 

 
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