Справочник MOSFET. 2SK985

 

2SK985 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK985
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SK985

 

 

2SK985 Datasheet (PDF)

 9.2. Size:260K  1
2sk981 2sk981a.pdf

2SK985
2SK985

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

 9.3. Size:142K  toshiba
2sk982.pdf

2SK985
2SK985

2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit: mmAnalog Switch Applications Interface Applications Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = 50 mA D Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode

 9.4. Size:200K  inchange semiconductor
2sk987.pdf

2SK985
2SK985

isc N-Channel MOSFET Transistor 2SK987DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 5

 9.5. Size:200K  inchange semiconductor
2sk988.pdf

2SK985
2SK985

isc N-Channel MOSFET Transistor 2SK988DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

Другие MOSFET... 2SK973L , 2SK973S , 2SK974L , 2SK974S , 2SK975 , 2SK979 , 2SK981 , 2SK981A , 20N60 , 2SK987 , 2SK988 , 2SK989 , 2SK990 , 2SK991 , 2SK992 , 2SK993 , 2SK994 .

 

 
Back to Top