FDMC7200 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC7200

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.9 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0235 Ohm

Empaquetado / Estuche: MLP3x3

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FDMC7200 Datasheet (PDF)

1.1. fdmc7200.pdf Size:432K _fairchild_semi

June 2009 FDMC7200 Dual N-Channel PowerTrench® MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A has been internally connected to enable easy placement and Max rDS(on) = 38 mΩ at VGS = 4.5

1.2. fdmc7200s.pdf Size:509K _fairchild_semi

June 2014 FDMC7200S Dual N-Channel PowerTrench® MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description This device includes two specialized N-Channel MOSFETs in a Q1: N-Channel dual power33 (3mm X 3mm MLP) package. The switch node has Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. Th

3.1. fdmc7208s.pdf Size:442K _fairchild_semi

July 2013 FDMC7208S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ Features General Description Q1: N-Channel This device includes two 30V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is en- Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 12 A hanced for exceptional thermal performance. Max rDS(on) = 11.0 mΩ at VGS =

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