Справочник MOSFET. FDMC7200

 

FDMC7200 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDMC7200

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1.9 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 6 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.0235 Ohm

Тип корпуса: MLP3X3

Аналог (замена) для FDMC7200

 

 

FDMC7200 Datasheet (PDF)

..1. fdmc7200.pdf Size:432K _fairchild_semi

FDMC7200
FDMC7200

June 2009FDMC7200Dual N-Channel PowerTrench MOSFET 30 V, 12 m and 23.5 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 23.5 m at VGS = 10 V, ID = 6 Ahas been internally connected to enable easy placement and Max rDS(on) = 38 m at VGS = 4.5

0.1. fdmc7200s.pdf Size:509K _fairchild_semi

FDMC7200
FDMC7200

June 2014FDMC7200SDual N-Channel PowerTrench MOSFETs 30 V, 22 m, 10 m Features General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldual power33 (3mm X 3mm MLP) package. The switch node has Max rDS(on) = 22 m at VGS = 10 V, ID = 6 Abeen internally connected to enable easy placement and routing of synchronous buck converters. Th

7.1. fdmc7208s.pdf Size:442K _fairchild_semi

FDMC7200
FDMC7200

July 2013FDMC7208SDual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 9.0 m Q2: 30 V, 16 A, 6.4 mFeatures General DescriptionQ1: N-ChannelThis device includes two 30V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is en- Max rDS(on) = 9.0 m at VGS = 10 V, ID = 12 Ahanced for exceptional thermal performance. Max rDS(on) = 11.0 m at VGS =

 9.1. fdmc7678.pdf Size:330K _fairchild_semi

FDMC7200
FDMC7200

June 2011FDMC7678N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 mFeatures General Description Max rDS(on) = 5.3 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High

9.2. fdmc7692.pdf Size:319K _fairchild_semi

FDMC7200
FDMC7200

September 2010FDMC7692N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 Abeen especially tailored to minimize the on-state resistance. This H

 9.3. fdmc7582.pdf Size:301K _fairchild_semi

FDMC7200
FDMC7200

April 2012FDMC7582N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mFeatures General Description Max rDS(on) = 5.0 m at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 7.5 m at VGS = 4.5 V, ID = 13.6 Aringing of DC/DC converters using either synchronous or State-of-th

9.4. fdmc7672.pdf Size:208K _fairchild_semi

FDMC7200
FDMC7200

March 2010FDMC7672N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High p

 9.5. fdmc7570s.pdf Size:366K _fairchild_semi

FDMC7200
FDMC7200

December 2009FDMC7570SN-Channel Power Trench SyncFETTM 25 V, 40 A, 2 mFeatures General DescriptionThe FDMC7570S has been designed to minimize losses in Max rDS(on) = 2 m at VGS = 10 V, ID = 27 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.9 m at VGS = 4.5 V, ID = 21.5 Apackage technologies have been combined to offer the lowest

9.6. fdmc7680.pdf Size:207K _fairchild_semi

FDMC7200
FDMC7200

March 2010FDMC7680N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m Features General Description Max rDS(on) = 7.2 m at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.5 m at VGS = 4.5 V, ID = 12.4 Abeen especially tailored to minimize the on-state resistance. This High p

9.7. fdmc7660s.pdf Size:371K _fairchild_semi

FDMC7200
FDMC7200

December 2009FDMC7660SN-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mFeatures General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 Aand package technologies have been combined to offer the Hi

9.8. fdmc7692s.pdf Size:328K _fairchild_semi

FDMC7200
FDMC7200

September 2010FDMC7692SN-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 mFeatures General DescriptionThis FDMC7692S is produced using Fairchild Semiconductors Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 Aadvanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 Atailored to minimize the on-state resistance. This

9.9. fdmc7664.pdf Size:205K _fairchild_semi

FDMC7200
FDMC7200

June 2010FDMC7664N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 Abeen especially tailored to minimize the on-state resistance. This de

9.10. fdmc7672s.pdf Size:343K _fairchild_semi

FDMC7200
FDMC7200

September 2010FDMC7672SN-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 mFeatures General DescriptionThis FDMC7672S is produced using Fairchild Semiconductors Max rDS(on) = 6.0 m at VGS = 10 V, ID = 14.8 Aadvanced Power Trench process that has been especially Max rDS(on) = 7.1 m at VGS = 4.5 V, ID = 12.4 Atailored to minimize the on-state resistance. This d

9.11. fdmc7660dc.pdf Size:283K _fairchild_semi

FDMC7200
FDMC7200

January 2011FDMC7660DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

9.12. fdmc7660.pdf Size:250K _fairchild_semi

FDMC7200
FDMC7200

December 2009FDMC7660N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 Abeen especially tailored to minimize the on-state resistance. This High perfo

9.13. fdmc7696.pdf Size:272K _fairchild_semi

FDMC7200
FDMC7200

November 2011FDMC7696N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance.This device

9.14. fdmc7572s.pdf Size:373K _fairchild_semi

FDMC7200
FDMC7200

January 2010FDMC7572SN-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mFeatures General Description Max rDS(on) = 3.15 m at VGS = 10 V, ID = 22.5 AThe FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowe

9.15. fdmc7692.pdf Size:469K _onsemi

FDMC7200
FDMC7200

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

9.16. fdmc7570s.pdf Size:459K _onsemi

FDMC7200
FDMC7200

FDMC7570SMOSFET N-Channel,POWERTRENCH),SyncFETt25 V, 40 A, 2 mWwww.onsemi.comGeneral DescriptionThe FDMC7570S has been designed to minimize losses in powerPin 1conversion application. Advancements in both silicon and packagetechnologies have been combined to offer the lowest RDS(on) whilemaintaining excellent switching performance. This device has theadded benefit of

9.17. fdmc7572s.pdf Size:385K _onsemi

FDMC7200
FDMC7200

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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