GWM100-01X1-SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GWM100-01X1-SL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: ISOPLUSDIL
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Búsqueda de reemplazo de GWM100-01X1-SL MOSFET
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GWM100-01X1-SL datasheet
gwm100-01x1-smd.pdf
GWM 100-01X1 VDSS = 100 V Three phase full Bridge ID25 = 90 A with Trench MOSFETs RDSon typ. = 7.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 100 V - electric power steering
gwm100-0085x1-smd.pdf
GWM100-0085X1 VDSS = 85 V Three phase full Bridge ID25 = 103 A with Trench MOSFETs RDSon typ. = 5.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 85 V - electric power steering
gwm100-0085x1-sl.pdf
GWM100-0085X1 VDSS = 85 V Three phase full Bridge ID25 = 103 A with Trench MOSFETs RDSon typ. = 5.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 85 V - electric power steering
Otros transistores... GMM3x180-004X2-SMD, FDMC7200, GMM3x60-015X2-SMD, FDMC0310AS, GWM100-0085X1-SL, FDMS3610S, GWM100-0085X1-SMD, FDMS3606S, STP80NF70, FDMS3604S, GWM100-01X1-SMD, FDMS3602AS, GWM120-0075X1-SL, FDMS3600AS, GWM120-0075X1-SMD, FDMS0310S, GWM160-0055X1-SL
Parámetros del MOSFET. Cómo se afectan entre sí.
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