GWM100-01X1-SMD Todos los transistores

 

GWM100-01X1-SMD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GWM100-01X1-SMD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 15 W

Tensión drenaje-fuente |Vds|: 100 V

Corriente continua de drenaje |Id|: 90 A

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 55 nS

Resistencia drenaje-fuente RDS(on): 0.0085 Ohm

Empaquetado / Estuche: ISOPLUSDIL

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GWM100-01X1-SMD Datasheet (PDF)

0.1. gwm100-01x1-smd.pdf Size:290K _ixys

GWM100-01X1-SMD
GWM100-01X1-SMD

GWM 100-01X1VDSS = 100 VThree phase full BridgeID25 = 90 Awith Trench MOSFETsRDSon typ. = 7.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 100 V - electric power steering

6.1. gwm100-0085x1-sl.pdf Size:197K _ixys

GWM100-01X1-SMD
GWM100-01X1-SMD

GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering

6.2. gwm100-0085x1-smd.pdf Size:182K _ixys

GWM100-01X1-SMD
GWM100-01X1-SMD

GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering

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