GWM100-01X1-SMD MOSFET. Datasheet pdf. Equivalent
Type Designator: GWM100-01X1-SMD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 15 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Drain Current |Id|: 90 A
Rise Time (tr): 55 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: ISOPLUSDIL
GWM100-01X1-SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GWM100-01X1-SMD Datasheet (PDF)
1.1. gwm100-01x1-smd.pdf 
Size:290K _ixys
GWM 100-01X1 VDSS = 100 V Three phase full Bridge ID25 = 90 A with Trench MOSFETs RDSon typ. = 7.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings • in automobiles VDSS TJ = 25°C to 150°C 100 V - electric power steering
2.1. gwm100-0085x1-sl.pdf Size:197K _ixys
GWM100-0085X1 VDSS = 85 V Three phase full Bridge ID25 = 103 A with Trench MOSFETs RDSon typ. = 5.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings • in automobiles VDSS TJ = 25°C to 150°C 85 V - electric power steering
2.2. gwm100-0085x1-smd.pdf Size:182K _ixys
GWM100-0085X1 VDSS = 85 V Three phase full Bridge ID25 = 103 A with Trench MOSFETs RDSon typ. = 5.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings • in automobiles VDSS TJ = 25°C to 150°C 85 V - electric power steering
Datasheet: GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , IRFB4227 , FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD .
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