2SK989 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK989
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   tonⓘ - Tiempo de encendido: 100 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO247

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2SK989 Datasheet (PDF)

..1. Size:97K 1
2sk987 2sk988 2sk989 2sk990 2sk993 2sk994 2sk997 2sk998.pdf

9.1. Size:260K 1
2sk981 2sk981a.pdf

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

9.2. Size:142K toshiba
2sk982.pdf

2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit: mmAnalog Switch Applications Interface Applications Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = 50 mA D Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode

9.3. Size:200K inchange semiconductor
2sk987.pdf

isc N-Channel MOSFET Transistor 2SK987DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 5

9.4. Size:200K inchange semiconductor
2sk988.pdf

isc N-Channel MOSFET Transistor 2SK988DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

Otros transistores... 2SK974S , 2SK975 , 2SK979 , 2SK981 , 2SK981A , 2SK985 , 2SK987 , 2SK988 , IRF540 , 2SK990 , 2SK991 , 2SK992 , 2SK993 , 2SK994 , 2SK995 , 2SK996 , 2SK997 .

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