2SK989 Specs and Replacement
Type Designator: 2SK989
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 100 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO247
2SK989 substitution
- MOSFET ⓘ Cross-Reference Search
2SK989 datasheet
2sk981 2sk981a.pdf
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request... See More ⇒
2sk982.pdf
2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode ... See More ⇒
2sk987.pdf
isc N-Channel MOSFET Transistor 2SK987 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 5... See More ⇒
Detailed specifications: 2SK974S, 2SK975, 2SK979, 2SK981, 2SK981A, 2SK985, 2SK987, 2SK988, IRF540, 2SK990, 2SK991, 2SK992, 2SK993, 2SK994, 2SK995, 2SK996, 2SK997
Keywords - 2SK989 MOSFET specs
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