FCH043N60 Todos los transistores

 

FCH043N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCH043N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 592 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Resistencia drenaje-fuente RDS(on): 0.043 Ohm

Empaquetado / Estuche: TO247

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FCH043N60 Datasheet (PDF)

1.1. fch043n60.pdf Size:437K _fairchild_semi

FCH043N60
FCH043N60

April 2014 FCH043N60 N-Channel SuperFET® II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 37 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 163 nC) and lowe

5.1. fch041n65f f085.pdf Size:635K _upd-mosfet

FCH043N60
FCH043N60

November 2014 FCH041N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 mΩ D Features Typical RDS(on) = 34 mΩ at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing,

5.2. fch041n60f f085.pdf Size:617K _upd-mosfet

FCH043N60
FCH043N60

April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 mΩ D Features Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra

 5.3. fch041n65f.pdf Size:1373K _fairchild_semi

FCH043N60
FCH043N60

December 2014 FCH041N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 226 nC

5.4. fch041n60e.pdf Size:559K _fairchild_semi

FCH043N60
FCH043N60

December 2013 FCH041N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 285 nC

 5.5. fch041n60f.pdf Size:594K _fairchild_semi

FCH043N60
FCH043N60

December 2013 FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn

5.6. fch041n60f.pdf Size:261K _inchange_semiconductor

FCH043N60
FCH043N60

isc N-Channel MOSFET Transistor FCH041N60F ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga

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