FCH043N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH043N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 592 W
Tensión drenaje-fuente |Vds|: 600 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 3.5 V
Resistencia drenaje-fuente RDS(on): 0.043 Ohm
Empaquetado / Estuche: TO247
Búsqueda de reemplazo de MOSFET FCH043N60
FCH043N60 Datasheet (PDF)
..1. fch043n60.pdf 
Size:437K _fairchild_semi
April 2014FCH043N60N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 37 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 163 nC)and lowe
..2. fch043n60.pdf Size:540K _onsemi
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. fch043n60.pdf Size:362K _inchange_semiconductor
isc N-Channel MOSFET Transistor FCH043N60FEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 43m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
9.1. fch040n65s3.pdf Size:347K _1
FCH040N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to
9.2. fch041n65f.pdf Size:1373K _fairchild_semi
December 2014FCH041N65FN-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC
9.3. fch041n65f f085.pdf Size:635K _fairchild_semi
November 2014FCH041N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,
9.4. fch041n60e.pdf Size:559K _fairchild_semi
December 2013FCH041N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 77 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 285 nC
9.5. fch041n60f f085.pdf Size:617K _fairchild_semi
April 2015FCH041N60F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 AG Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche TestedG Qualified to AEC Q101DTO-247SS RoHS CompliantDescription Forcurrentpackagedra
9.6. fch041n60f.pdf Size:594K _fairchild_semi
December 2013FCH041N60FN-Channel SuperFET II FRFET MOSFET600 V, 76 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techn
9.7. fch040n65s3.pdf Size:507K _onsemi
FCH040N65S3MOSFET Power,N-Channel, SUPERFET) III,Easy Drive650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advan
9.8. fch041n60f.pdf Size:906K _onsemi
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.9. fch041n65f-f085.pdf Size:416K _onsemi
MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 76 A, 41 mWFCH041N65F-F085DescriptionSuperFET II Mosfet is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu
9.10. fch040n65s3.pdf Size:361K _inchange_semiconductor
isc N-Channel MOSFET Transistor FCH040N65S3FEATURESWith TO-247 packagingDrain Source Voltage-: V 650VDSSStatic drain-source on-resistance:RDS(on) 99m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
9.11. fch041n60f.pdf Size:261K _inchange_semiconductor
isc N-Channel MOSFET Transistor FCH041N60FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Ga
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