All MOSFET. FCH043N60 Datasheet

 

FCH043N60 Datasheet and Replacement


   Type Designator: FCH043N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 592 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TO247
 

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FCH043N60 Datasheet (PDF)

 ..1. Size:437K  fairchild semi
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FCH043N60

April 2014FCH043N60N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 37 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 163 nC)and lowe

 ..2. Size:540K  onsemi
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FCH043N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:362K  inchange semiconductor
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FCH043N60

isc N-Channel MOSFET Transistor FCH043N60FEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 43m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:347K  1
fch040n65s3.pdf pdf_icon

FCH043N60

FCH040N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to

Datasheet: FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , FCP190N65F , GWM180-004X2-SL , 2N60 , GWM180-004X2-SMD , FDB86360F085 , IXFA102N15T , IXFA10N60P , IXFA10N80P , IXFA110N15T2 , IXFA12N50P , IXFA130N10T .

History: CS38N30AN | SSFN3317 | 5N60G-TA3-T | STS3417

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