2SK996 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK996
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 40 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Paquete / Cubierta: TO220F
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2SK996 Datasheet (PDF)
2sk996.pdf
isc N-Channel MOSFET Transistor 2SK996DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE NITV Drain-Source Voltage (V =0) 600
2sk992.pdf
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2sk991.pdf
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Otros transistores... 2SK988 , 2SK989 , 2SK990 , 2SK991 , 2SK992 , 2SK993 , 2SK994 , 2SK995 , IRF640N , 2SK997 , 2SK998 , 3N124 , 3N125 , 3N126 , 3N140 , 3N141 , 3N159 .
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