IXFH150N15P Todos los transistores

 ..1. Size:252K  ixys
 ixfh150n15p ixfk150n15p.pdf

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diode trr 200 ns Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGS Contin

 5.1. Size:182K  ixys
 ixfh150n17t2 ixft150n17t2.pdf

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 175V IXFH150N17T2 ID25 = 150A Power MOSFET IXFT150N17T2 RDS(on) 12.0m trr 160ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 175 V G VDGR TJ = 25 C to 175 C, RG

 6.1. Size:180K  ixys
 ixfh150n20t ixft150n20t.pdf

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T RDS(on) 15m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V TO-247 (IX

 8.1. Size:426K  1
 ixfh11n80 ixfm11n80 ixfh13n80 ixfm13n80 ixfh14n80 ixfm14n80 ixfh15n80 ixfm15n80.pdf

 8.2. Size:82K  ixys
 ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2

 8.3. Size:111K  ixys
 ixfh15n80q ixft15n80q.pdf

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C15 A IDM

 8.4. Size:116K  ixys
 ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 1000 V (TAB) VGS Continuous

 8.5. Size:112K  ixys
 ixfh14n80 ixfh15n80.pdf