IXFH150N15P MOSFET Datasheet: N-Ch, 150V, 150A. Full specification with pinout and replacement list

IXFH150N15P Specs and Replacement

Type Designator: IXFH150N15P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 714 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO247

IXFH150N15P substitution

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IXFH150N15P datasheet

..1. Size:252K ixys
ixfh150n15p ixfk150n15p.pdf pdf_icon

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diode trr 200 ns Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGS Contin... See More ⇒

5.1. Size:182K ixys
ixfh150n17t2 ixft150n17t2.pdf pdf_icon

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 175V IXFH150N17T2 ID25 = 150A Power MOSFET IXFT150N17T2 RDS(on) 12.0m trr 160ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 175 V G VDGR TJ = 25 C to 175 C, RG... See More ⇒

6.1. Size:180K ixys
ixfh150n20t ixft150n20t.pdf pdf_icon

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T RDS(on) 15m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V TO-247 (IX... See More ⇒

8.1. Size:426K 1
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