IXFH18N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFH18N60P Datasheet (PDF)

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IXFH 18N60P VDSS = 600 VPolarHVTM HiPerFETIXFV 18N60P ID25 = 18 APower MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Co

5.1. Size:183K ixys
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Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA18N60XPower MOSFET ID25 = 18AIXFP18N60X RDS(on) 230m IXFH18N60XTO-263 AA (IXFA)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to

6.1. Size:336K ixys
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X2-Class HiPerFETTM VDSS = 650VIXFA18N65X2Power MOSFET ID25 = 18AIXFP18N65X2 RDS(on) 200m IXFH18N65X2N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 650 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGS

7.1. Size:130K ixys
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Advance Technical InformationHiperFETTM VDSS = 1000VIXFT18N100Q3Power MOSFETs ID25 = 18AIXFH18N100Q3 Q3-Class RDS(on) 660m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1M

Otros transistores... IXFH160N15T , IXFH160N15T2 , IXFH16N120P , IXFH16N50P , IXFH16N80P , IXFH16N90Q , IXFH170N10P , IXFH17N80Q , MMD60R360PRH , IXFH18N90P , IXFH20N100P , IXFH20N80P , IXFH21N50F , IXFH21N50Q , IXFH22N50P , IXFH22N60P , IXFH22N60P3 .