IXFH20N80P Todos los transistores

 

IXFH20N80P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH20N80P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 86 nC

Tiempo de elevación (tr): 250 nS

Resistencia drenaje-fuente RDS(on): 0.52 Ohm

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de MOSFET IXFH20N80P

 

IXFH20N80P Datasheet (PDF)

1.1. ixfh20n80q ixfk20n80q ixft20n80q.pdf Size:149K _ixys

IXFH20N80P
IXFH20N80P

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs ? ? IXFT20N80Q RDS(on) = 0.42 ? ? ? Q-Class N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V (TAB) VGS Continuous 20

1.2. ixfh20n80p ixft20n80p ixfv20n80p.pdf Size:326K _ixys

IXFH20N80P
IXFH20N80P

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P ? ? RDS(on) ? 520 m ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 20N80PS ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V (TAB) VGSS Continuou

 2.1. ixfa20n85xhv ixfp20n85x ixfh20n85x.pdf Size:288K _update-mosfet

IXFH20N80P
IXFH20N80P

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X   RDS(on)    330m     IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuo

2.2. ixfa20n85xhv ixfh20n85x.pdf Size:288K _update-mosfet

IXFH20N80P
IXFH20N80P

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X   RDS(on)    330m     IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuo

 2.3. ixfh20n85x.pdf Size:212K _inchange_semiconductor

IXFH20N80P
IXFH20N80P

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH20N85X ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

Otros transistores... IXFH16N50P , IXFH16N80P , IXFH16N90Q , IXFH170N10P , IXFH17N80Q , IXFH18N60P , IXFH18N90P , IXFH20N100P , 2SK4106 , IXFH21N50F , IXFH21N50Q , IXFH22N50P , IXFH22N60P , IXFH22N60P3 , IXFH230N075T2 , IXFH230N10T , IXFH23N60Q .

 

 
Back to Top

 


IXFH20N80P
  IXFH20N80P
  IXFH20N80P
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |

 

 

 
Back to Top