IXFH69N30P Datasheet. Equivalente

 ..1. Size:176K  ixys
 ixfh69n30p ixft69n30p.pdf

IXFH 69N30P VDSS = 300 V PolarHTTM HiPerFET IXFT 69N30P ID25 = 69 A Power MOSFET RDS(on) 49 m trr 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuou

 9.1. Size:71K  ixys
 ixfh60n25q ixfk60n25q ixft60n25q.pdf

Advanced Technical Information IXFH 60N25Q HiPerFETTM VDSS = 250 V IXFK 60N25Q Power MOSFETs ID25 = 60 A IXFT 60N25Q Q-Class RDS(on) = 47 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 250

 9.2. Size:116K  ixys
 ixfh6n100q ixft6n100q.pdf

VDSS = 1000 V IXFH 6N100Q HiPerFETTM ID25 = 6 A IXFT 6N100Q Power MOSFETs RDS(on) = 1.9 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V VG

 9.3. Size:157K  ixys
 ixfh60n60x2a.pdf

X2-Class HiPerFETTM VDSS = 600V IXFH60N60X2A Power MOSFET ID25 = 60A RDS(on) 52m AEC Q101 Qualified N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 600 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 600 V S = Source Ta

 9.4. Size:113K  ixys
 ixfh60n65x2.pdf

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH60N65X2 Power MOSFET ID25 = 60A RDS(on) 52m N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S =

 9.5. Size:77K  ixys
 ixfh6n90 ixfh6n100 ixfm6n90 ixfm6n100.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 6 N90 900 V 6 A 1.8 W Power MOSFETs IXFH/IXFM 6 N100 1000 V 6 A 2.0 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 6N90 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 6N100 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID2

 9.6. Size:166K  ixys
 ixfh60n60x ixfq60n60x.pdf

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFQ60N60X Power MOSFET ID25 = 60A IXFH60N60X RDS(on) 55m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXFQ) Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-247 (IXFH) VDGR TJ = 25 C to 150 C, RGS = 1

 9.7. Size:94K  ixys
 ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf

 9.8. Size:302K  inchange semiconductor
 ixfh60n60x2a.pdf

isc N-Channel MOSFET Transistor IXFH60N60X2A FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 9.9. Size:260K  inchange semiconductor
 ixfh60n60x.pdf

isc N-Channel MOSFET Transistor IXFH60N60X FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga

 9.10. Size:345K  inchange semiconductor
 ixfh6n120p.pdf

isc N-Channel MOSFET Transistor IXFH6N120P FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 1200V(Min) DSS Static Drain-Source On-Resistance R = 2.75 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s