IXFH69N30P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXFH69N30P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 500 W
Предельно допустимое напряжение сток-исток |Uds|: 300 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 69 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 156 nC
Время нарастания (tr): 200 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.049 Ohm
Тип корпуса: TO247
Аналог (замена) для IXFH69N30P
IXFH69N30P Datasheet (PDF)
ixfh69n30p ixft69n30p.pdf
IXFH 69N30P VDSS = 300 VPolarHTTM HiPerFETIXFT 69N30P ID25 = 69 APower MOSFET RDS(on) 49 m trr 200 nsN-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuou
ixfh60n25q ixfk60n25q ixft60n25q.pdf
Advanced Technical InformationIXFH 60N25QHiPerFETTMVDSS = 250 VIXFK 60N25QPower MOSFETs ID25 = 60 AIXFT 60N25QQ-Class RDS(on) = 47 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 MW 250
ixfh6n100q ixft6n100q.pdf
VDSS = 1000 VIXFH 6N100QHiPerFETTMID25 = 6 AIXFT 6N100QPower MOSFETsRDS(on) = 1.9 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VVG
ixfh60n60x2a.pdf
X2-Class HiPerFETTM VDSS = 600VIXFH60N60X2APower MOSFET ID25 = 60A RDS(on) 52m AEC Q101 QualifiedN-Channel Enhancement ModeAvalanche RatedTO-247Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 600 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 600 VS = Source Ta
ixfh60n65x2.pdf
Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFH60N65X2Power MOSFET ID25 = 60A RDS(on) 52m N-Channel Enhancement ModeAvalanche RatedTO-247Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS =
ixfh6n90 ixfh6n100 ixfm6n90 ixfm6n100.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 6 N90 900 V 6 A 1.8 WPower MOSFETsIXFH/IXFM 6 N100 1000 V 6 A 2.0 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 6N90 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 6N100 1000 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID2
ixfh60n60x ixfq60n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFQ60N60XPower MOSFET ID25 = 60AIXFH60N60X RDS(on) 55m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXFQ)Fast Intrinsic DiodeGDSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1
ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 67 N10 100 V 67 A 25 mWPower MOSFETsIXFH/IXFM 75 N10 100 V 75 A 20 mWtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25
ixfh60n60x2a.pdf
isc N-Channel MOSFET Transistor IXFH60N60X2AFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 52m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
ixfh60n60x.pdf
isc N-Channel MOSFET Transistor IXFH60N60XFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Ga
ixfh6n120p.pdf
isc N-Channel MOSFET Transistor IXFH6N120PFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 1200V(Min)DSSStatic Drain-Source On-Resistance: R = 2.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
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History: APT84M50B2
