IXFK102N30P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Preliminary Technical InformationVDSS = 300 VIXFK 102N30PPolarHTTM HiPerFETID25 = 102 APower MOSFET RDS(on) 33 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS =

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK100N65X2Power MOSFET ID25 = 100AIXFX100N65X2 RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS

IXFX 100N25 VDSS = 250 VHiPerFETTMIXFK 100N25 ID25 = 100 APower MOSFETsRDS(on) = 27 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET c

VDSS ID25 RDS(on)HiPerFETTMIXFK100N10 100 V 100 A 12 mWPower MOSFETsIXFN150N10 100 V 150 A 12 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 100 100 VG (TAB)VDGR TJ = 25C to 150C; RGS = 1 MW 100 100 V DSVGS Continuous 20 20 VminiBLOC, SOT

VDSS ID25 RDS(on)HiPerFETTMIXFK 110 N06 60 V 110 A 6 mWPower MOSFETsIXFK 105 N07 70 V 105 A 7 mWIXFK 110 N07 70 V 110 A 6 mWN-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)VDSS TJ = 25C to 150C N07 70 VN06 60 VVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VN06 60 VVGS Continuous 2

IXFX 100N25 VDSS = 250 VHiPerFETTMIXFK 100N25 ID25 = 100 APower MOSFETsRDS(on) = 27 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET c

VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t