Справочник MOSFET. IXFK102N30P

 

IXFK102N30P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXFK102N30P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 700 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 102 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 224 nC
   trⓘ - Время нарастания: 200 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
   Тип корпуса: TO264

 Аналог (замена) для IXFK102N30P

 

 

IXFK102N30P Datasheet (PDF)

 ..1. Size:132K  ixys
 ixfk102n30p.pdf

IXFK102N30P IXFK102N30P

Preliminary Technical InformationVDSS = 300 VIXFK 102N30PPolarHTTM HiPerFETID25 = 102 APower MOSFET RDS(on) 33 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS =

 8.1. Size:159K  ixys
 ixfk100n65x2 ixfx100n65x2.pdf

IXFK102N30P IXFK102N30P

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK100N65X2Power MOSFET ID25 = 100AIXFX100N65X2 RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS

 8.2. Size:96K  ixys
 ixfx100n25 ixfk100n25.pdf

IXFK102N30P IXFK102N30P

IXFX 100N25 VDSS = 250 VHiPerFETTMIXFK 100N25 ID25 = 100 APower MOSFETsRDS(on) = 27 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET c

 8.3. Size:117K  ixys
 ixfk100n10 ixfn150n10.pdf

IXFK102N30P IXFK102N30P

VDSS ID25 RDS(on)HiPerFETTMIXFK100N10 100 V 100 A 12 mWPower MOSFETsIXFN150N10 100 V 150 A 12 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 100 100 VG (TAB)VDGR TJ = 25C to 150C; RGS = 1 MW 100 100 V DSVGS Continuous 20 20 VminiBLOC, SOT

 8.4. Size:156K  ixys
 ixfk110n06 ixfk105n07 ixfk110n07.pdf

IXFK102N30P IXFK102N30P

VDSS ID25 RDS(on)HiPerFETTMIXFK 110 N06 60 V 110 A 6 mWPower MOSFETsIXFK 105 N07 70 V 105 A 7 mWIXFK 110 N07 70 V 110 A 6 mWN-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)VDSS TJ = 25C to 150C N07 70 VN06 60 VVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VN06 60 VVGS Continuous 2

 8.5. Size:96K  ixys
 ixfk100n25.pdf

IXFK102N30P IXFK102N30P

IXFX 100N25 VDSS = 250 VHiPerFETTMIXFK 100N25 ID25 = 100 APower MOSFETsRDS(on) = 27 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET c

 8.6. Size:112K  ixys
 ixfk100n20 ixfn90n20 ixfn106n20.pdf

IXFK102N30P IXFK102N30P

VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top