IXFN320N17T2 Todos los transistores

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IXFN320N17T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFN320N17T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1070 W

Tensión drenaje-fuente (Vds): 170 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 260 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0052 Ohm

Empaquetado / Estuche: SOT227

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IXFN320N17T2 Datasheet (PDF)

4.1. ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf Size:192K _ixys

IXFN320N17T2
IXFN320N17T2

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18? 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25? 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25C to 150C 600 600 V G VDGR TJ = 25C to 150C; RGS = 1 M? 600 600

5.1. ixfn340n07.pdf Size:104K _ixys

IXFN320N17T2
IXFN320N17T2

HiPerFETTM IXFN 340N07 VDSS = 70 V Power MOSFETs ID25 = 340 A ? ? Single Die MOSFET RDS(on) = 4 m? ? ? D ? trr ? ? 200 ns ? ? N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C70 V S VDGR TJ = 25C to 150C; RGS = 1 M? 70 V G VGS Continuous 20 V VGSM Tr

5.2. ixfn34n100.pdf Size:570K _ixys

IXFN320N17T2
IXFN320N17T2

IXFN 34N100 VDSS = 1000V HiPerFETTM ID25 = 34A Power MOSFETs ? RDS(on) = 0.28? ? ? ? Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 1000 V S VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G VGS Continuous 20 V VGSM Transient 30 V S ID25

5.3. ixfn34n80.pdf Size:128K _ixys

IXFN320N17T2
IXFN320N17T2

HiPerFETTM Power MOSFETs IXFN 34N80 VDSS = 800 V Single DieMOSFET ID25 = 34 A RDS(on) = 0.24 W N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25°C to 150°C 800 V S VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V G VGS Continuous ±20 V VGSM Transi

5.4. ixfn39n90.pdf Size:128K _ixys

IXFN320N17T2
IXFN320N17T2

VDSS = 900 V IXFN 39N90 HiPerFETTM ID25 = 39 A Power MOSFETs Ω RDS(on) = 0.22 Ω Ω Ω Ω Single MOSFET Die D ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25°C to 150°C 900 V E153432 VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900

5.5. ixfn36n100.pdf Size:128K _ixys

IXFN320N17T2
IXFN320N17T2

HiPerFETTM IXFN 36N100 V = 1000V DSS Power MOSFETs ID25 = 36A Ω Ω Single Die MOSFET RDS(on) = 0.24Ω Ω Ω D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25°C to 150°C 1000 V S VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V G VGS Continuous ±20 V VGSM

Otros transistores... IXFN24N100F , IXFN26N100P , IXFN26N120P , IXFN27N80Q , IXFN280N085 , IXFN300N10P , IXFN30N110P , IXFN30N120P , 2SK105 , IXFN32N100P , IXFN32N100Q3 , IXFN32N120 , IXFN32N120P , IXFN32N80P , IXFN340N06 , IXFN34N100 , IXFN360N10T .

 


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