IXFP22N60P3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP22N60P3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 250 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: TO220

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IXFP22N60P3 datasheet

 6.1. Size:136K  ixys
 ixfp22n65x2m.pdf pdf_icon

IXFP22N60P3

Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP22N65X2M Power MOSFET ID25 = 22A RDS(on) 145m (Electrically Isolated Tab) OVERMOLDED N-Channel Enhancement Mode TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G Isolated Tab D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Conti

 6.2. Size:336K  ixys
 ixfa22n65x2 ixfp22n65x2 ixfh22n65x2.pdf pdf_icon

IXFP22N60P3

X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 145m IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM T

 6.3. Size:168K  ixys
 ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf pdf_icon

IXFP22N60P3

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 160m IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to

 6.4. Size:203K  inchange semiconductor
 ixfp22n65x2m.pdf pdf_icon

IXFP22N60P3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2M FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G

MOSTRAR MÁS

Otros transistores... IXFP110N15T2, IXFP12N50P, IXFP12N50PM, IXFP130N10T, IXFP130N10T2, IXFP14N60P, IXFP16N50P, IXFP180N10T2, IRFB3607, IXFP230N075T2, IXFP3N120, IXFP3N50PM, IXFP3N80, IXFP4N100P, IXFP4N100PM, IXFP4N100Q, IXFP4N100QM