Справочник MOSFET. IXFP22N60P3

 

IXFP22N60P3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IXFP22N60P3

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 500 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 22 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 38 nC

Время нарастания (tr): 250 ns

Сопротивление сток-исток открытого транзистора (Rds): 0.36 Ohm

Тип корпуса: TO220

Аналог (замена) для IXFP22N60P3

 

 

IXFP22N60P3 Datasheet (PDF)

2.1. ixfp22n65x2m.pdf Size:136K _update-mosfet

IXFP22N60P3
IXFP22N60P3

Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP22N65X2M Power MOSFET ID25 = 22A   RDS(on)    145m     (Electrically Isolated Tab) OVERMOLDED N-Channel Enhancement Mode TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G Isolated Tab D VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Conti

2.2. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

IXFP22N60P3
IXFP22N60P3

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2   RDS(on)    160m     IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to

 2.3. ixfp22n65x2m.pdf Size:203K _inchange_semiconductor

IXFP22N60P3
IXFP22N60P3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2M ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G

2.4. ixfp22n65x2.pdf Size:205K _inchange_semiconductor

IXFP22N60P3
IXFP22N60P3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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