IXFP7N80PM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP7N80PM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 5 V

Qgⓘ - Carga de la puerta: 32 nC

trⓘ - Tiempo de subida: 250 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.44 Ohm

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de IXFP7N80PM MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXFP7N80PM datasheet

 8.1. Size:159K  ixys
 ixfa7n60p3 ixfp7n60p3.pdf pdf_icon

IXFP7N80PM

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA7N60P3 Power MOSFETs ID25 = 7A IXFP7N60P3 RDS(on) 1.15 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 600 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 600 V TO-220AB

 9.1. Size:184K  ixys
 ixfp72n20x3m.pdf pdf_icon

IXFP7N80PM

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 200V IXFP72N20X3M Power MOSFET ID25 = 72A RDS(on) 20m (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings G Isolated Tab D S VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V G = Gate D

 9.2. Size:180K  ixys
 ixfa76n15t2 ixfp76n15t2.pdf pdf_icon

IXFP7N80PM

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 150V IXFA76N15T2 ID25 = 76A Power MOSFET IXFP76N15T2 RDS(on) 20m N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrnsic Rectifier G S Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 175 C 150 V TO-220AB (IXFP) VDGR TJ = 25 C to 175 C, RGS = 1M

 9.3. Size:254K  inchange semiconductor
 ixfp72n20x3m.pdf pdf_icon

IXFP7N80PM

isc N-Channel MOSFET Transistor IXFP72N20X3M FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

MOSTRAR MÁS

Otros transistores... IXFP4N100Q, IXFP4N100QM, IXFP5N100P, IXFP5N50PM, IXFP6N120P, IXFP76N15T2, IXFP7N100P, IXFP7N80P, 10N65, IXFP8N50PM, IXFQ10N80P, IXFQ12N80P, IXFQ14N80P, IXFQ22N60P3, IXFQ24N50P2, IXFQ28N60P3, IXFQ50N60P3