IXFQ22N60P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFQ22N60P3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 250 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Paquete / Cubierta: TO3P
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IXFQ22N60P3 Datasheet (PDF)
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Otros transistores... IXFP76N15T2 , IXFP7N100P , IXFP7N80P , IXFP7N80PM , IXFP8N50PM , IXFQ10N80P , IXFQ12N80P , IXFQ14N80P , 75N75 , IXFQ24N50P2 , IXFQ28N60P3 , IXFQ50N60P3 , IXFQ60N50P3 , IXFR100N25 , IXFR102N30P , IXFR140N20P , IXFR140N30P .
History: MDU1401SVRH | PSMN040-100MSE | IXTY2N60P
History: MDU1401SVRH | PSMN040-100MSE | IXTY2N60P



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