All MOSFET. IXFQ22N60P3 Datasheet

 

IXFQ22N60P3 Datasheet and Replacement


   Type Designator: IXFQ22N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO3P
 

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IXFQ22N60P3 Datasheet (PDF)

 9.1. Size:157K  ixys
 ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf pdf_icon

IXFQ22N60P3

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA20N50P3ID25 = 20APower MOSFETsIXFP20N50P3 RDS(on) 300m IXFQ20N50P3N-Channel Enhancement Mode IXFH20N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

 9.2. Size:155K  ixys
 ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf pdf_icon

IXFQ22N60P3

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA26N50P3ID25 = 26APower MOSFETsIXFP26N50P3 RDS(on) 230m IXFQ26N50P3N-Channel Enhancement Mode IXFH26N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

 9.3. Size:155K  ixys
 ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf pdf_icon

IXFQ22N60P3

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA24N60XPower MOSFET ID25 = 24AIXFP24N60X RDS(on) 175m IXFQ24N60XIXFH24N60XN-Channel Enhancement ModeTO-220AB (IXFP)Avalanche RatedTO-263 AA (IXFA)Fast Intrinsic DiodeGGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

 9.4. Size:130K  ixys
 ixfq28n60p3 ixfh28n60p3.pdf pdf_icon

IXFQ22N60P3

Advance Technical InformationPolar3TM HiperFETTM VDSS = 600VIXFQ28N60P3ID25 = 28APower MOSFETsIXFH28N60P3 RDS(on) 260m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-3P (IXFQ)GDSymbol Test Conditions Maximum RatingsSTabVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C, RGS = 1M 600 VTO-247 ( IX

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Keywords - IXFQ22N60P3 MOSFET datasheet

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