IXFR180N06 Todos los transistores

 

IXFR180N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFR180N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 417 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 180 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 420 nC

Tiempo de elevación (tr): 200 nS

Resistencia drenaje-fuente RDS(on): 0.005 Ohm

Empaquetado / Estuche: ISOPLUS247

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IXFR180N06 Datasheet (PDF)

1.1. ixfr180n085.pdf Size:57K _ixys

IXFR180N06
IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V VGS Continuous ±20 V VGSM Transient ±30 V G D ID25 TC = 25°C

1.2. ixfr180n07.pdf Size:32K _ixys

IXFR180N06
IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 70 V G VGS Continuous ±20 V D VGSM Transient ±30 V Isolated back surface* ID

 2.1. ixfr180n15p.pdf Size:152K _ixys

IXFR180N06
IXFR180N06

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 13 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ = 25 C to 175 C; RGS = 1 M? 150

2.2. ixfr180n10.pdf Size:33K _ixys

IXFR180N06
IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr ? 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25 TC = 25C

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |

 

 

 
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