IXFR180N06 Todos los transistores

 

IXFR180N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFR180N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: ISOPLUS247

 Búsqueda de reemplazo de MOSFET IXFR180N06

 

IXFR180N06 Datasheet (PDF)

 5.1. Size:57K  ixys
 ixfr180n085.pdf pdf_icon

IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C

 5.2. Size:32K  ixys
 ixfr180n07.pdf pdf_icon

IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 70 V G VGS Continuous 20 V D VGSM Transient 30 V Isolated back surface* ID

 6.1. Size:152K  ixys
 ixfr180n15p.pdf pdf_icon

IXFR180N06

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 13 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ

 6.2. Size:33K  ixys
 ixfr180n10.pdf pdf_icon

IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25

MOSTRAR MÁS

Otros transistores... IXFR100N25 , IXFR102N30P , IXFR140N20P , IXFR140N30P , IXFR14N100Q2 , IXFR150N15 , IXFR15N100Q3 , IXFR16N120P , IRF1405 , IXFR180N15P , IXFR18N90P , IXFR200N10P , IXFR20N100P , IXFR20N120P , IXFR20N80P , IXFR21N100Q , IXFR230N20T .

History: PD0903BVA | MP150N08P

 

 
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