IXFR180N06 MOSFET Datasheet: N-Ch, 60V, 180A. Full specification with pinout and replacement list

IXFR180N06 Specs and Replacement

   Type Designator: IXFR180N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   Qg ⓘ - Total Gate Charge: 420 nC
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: ISOPLUS247

IXFR180N06 substitution

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IXFR180N06 datasheet

5.1. Size:57K ixys
ixfr180n085.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C... See More ⇒

5.2. Size:32K ixys
ixfr180n07.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 70 V G VGS Continuous 20 V D VGSM Transient 30 V Isolated back surface* ID... See More ⇒

6.1. Size:152K ixys
ixfr180n15p.pdf pdf_icon

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 13 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ... See More ⇒

6.2. Size:33K ixys
ixfr180n10.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25 ... See More ⇒

Detailed specifications: IXFR100N25 , IXFR102N30P , IXFR140N20P , IXFR140N30P , IXFR14N100Q2 , IXFR150N15 , IXFR15N100Q3 , IXFR16N120P , IRF1405 , IXFR180N15P , IXFR18N90P , IXFR200N10P , IXFR20N100P , IXFR20N120P , IXFR20N80P , IXFR21N100Q , IXFR230N20T .