IXFR24N80P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFR24N80P Datasheet (PDF)

..1. Size:94K ixys
ixfr24n80p.pdf pdf_icon

IXFR 24N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 13 APower MOSFET RDS(on) 420 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RG

7.1. Size:112K ixys
ixfr24n100.pdf pdf_icon

HiPerFETTM Power VDSS = 1000VIXFR24N100ID25 = 22AMOSFET RDS(on) 390m ISOPLUS247TMt 250ns(Electrically Isolated Back Surface)rrN-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Co

7.2. Size:33K ixys
ixfr24n50 ixfr26n50.pdf pdf_icon

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 50

7.3. Size:141K ixys
ixfr24n100q3.pdf pdf_icon

Advance Technical InformationHiperFETTM VDSS = 1000VIXFR24N100Q3Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns(Electrically Isolated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, R