IXFR32N100Q3 Todos los transistores

 

IXFR32N100Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFR32N100Q3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 570 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 23 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 6.5 V

Carga de compuerta (Qg): 195 nC

Tiempo de elevación (tr): 300 nS

Resistencia drenaje-fuente RDS(on): 0.35 Ohm

Empaquetado / Estuche: ISOPLUS247

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IXFR32N100Q3 Datasheet (PDF)

3.1. ixfr32n80p.pdf Size:149K _ixys

IXFR32N100Q3
IXFR32N100Q3

PolarHVTM HiPerFET VDSS = 800 V IXFR 32N80P ID25 = 20 A Power MOSFET ? ? RDS(on) ? 290 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 250 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800

3.2. ixfr30n50q ixfr32n50q.pdf Size:91K _ixys

IXFR32N100Q3
IXFR32N100Q3

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 W IXFR 32N50Q 500 V 30 A 0.15 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E 153432 VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V

 5.1. ixfc30n60p ixfr30n60p.pdf Size:135K _ixys

IXFR32N100Q3
IXFR32N100Q3

IXFC 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFR 30N60P ID25 = 15 A Power MOSFET ? ? RDS(on) ? 250 m? ? ? ? ? ? ? Electrically Isolated Back Surface ? trr ? 250 ns ? ? ? N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25C to 150C 600 V E153432 VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS

5.2. ixfr34n80.pdf Size:59K _ixys

IXFR32N100Q3
IXFR32N100Q3

IXFR 34N80 VDSS = 800 V HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 A (Electrically Isolated Backside) ? RDS(on) = 0.24 ? ? ? ? ? trr ? ? 250 ns ? ? Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V G VGSM Tra

 5.3. ixfr36n60p.pdf Size:144K _ixys

IXFR32N100Q3
IXFR32N100Q3

IXFR 36N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 20 A Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continu

5.4. ixfc36n50p ixfr36n50p.pdf Size:248K _ixys

IXFR32N100Q3
IXFR32N100Q3

IXFC 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFR 36N50P ID25 = 19 A Power MOSFET ? ? RDS(on) ? 190 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V

Otros transistores... IXFR24N90P , IXFR24N90Q , IXFR26N100P , IXFR26N120P , IXFR26N60Q , IXFR30N110P , IXFR30N60P , IXFR32N100P , APT50M38JFLL , IXFR32N80P , IXFR32N80Q3 , IXFR34N80 , IXFR36N50P , IXFR36N60P , IXFR38N80Q2 , IXFR40N50Q2 , IXFR40N90P .

 

 
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