IXFR32N100Q3 Datasheet. Specs and Replacement

Type Designator: IXFR32N100Q3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 570 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V

Qg ⓘ - Total Gate Charge: 195 nC

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: ISOPLUS247

IXFR32N100Q3 substitution

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IXFR32N100Q3 datasheet

 7.1. Size:149K  ixys
 ixfr32n80p.pdf pdf_icon

IXFR32N100Q3

PolarHVTM HiPerFET VDSS = 800 V IXFR 32N80P ID25 = 20 A Power MOSFET RDS(on) 290 m ISOPLUS247TM trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR T... See More ⇒

 7.2. Size:91K  ixys
 ixfr30n50q ixfr32n50q.pdf pdf_icon

IXFR32N100Q3

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 W IXFR 32N50Q 500 V 30 A 0.15 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E 153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V... See More ⇒

 9.1. Size:59K  ixys
 ixfr34n80.pdf pdf_icon

IXFR32N100Q3

IXFR 34N80 VDSS = 800 V HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 A (Electrically Isolated Backside) RDS(on) = 0.24 trr 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS ... See More ⇒

 9.2. Size:248K  ixys
 ixfc36n50p ixfr36n50p.pdf pdf_icon

IXFR32N100Q3

IXFC 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFR 36N50P ID25 = 19 A Power MOSFET RDS(on) 190 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ ... See More ⇒

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Detailed specifications: IXFR24N90P, IXFR24N90Q, IXFR26N100P, IXFR26N120P, IXFR26N60Q, IXFR30N110P, IXFR30N60P, IXFR32N100P, IRF730, IXFR32N80P, IXFR32N80Q3, IXFR34N80, IXFR36N50P, IXFR36N60P, IXFR38N80Q2, IXFR40N50Q2, IXFR40N90P

Keywords - IXFR32N100Q3 MOSFET specs

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