IXFR4N100Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFR4N100Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: ISOPLUS247

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IXFR4N100Q Datasheet (PDF)

..1. Size:79K ixys
ixfr4n100q.pdf

HiPerFETTM Power MOSFETs VDSS =1000 VIXFR 4N100QID25 = 3.5 AISOPLUS247TMRDS(on) = 3.0 (Electrically Isolated Backside) trr 200ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary DataSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C;

9.1. Size:34K ixys
ixfr44n60.pdf

HiPerFETTM Power MOSFETsIXFR 44N60 VDSS = 600 VISOPLUS247TMID25 = 38 A(Electrically Isolated Back Surface)RDS(on)= 130 mWSingle MOSFET Dietrr 250 nsISOPLUS 247TMSymbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C38 AG = Gate D = Drain

9.2. Size:117K ixys
ixfr40n50q2.pdf

VDSS = 500VHiPerFETTM IXFR40N50Q2ID25 = 29APower MOSFET RDS(on) 170m Q2-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgLow intrinsic Rg, low trrISOPLUS247 (IXFR)E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 V

9.3. Size:156K ixys
ixfr44n50q3.pdf

Advance Technical InformationHiperFETTM VDSS = 500VIXFR44N50Q3Pwer MOSFET ID25 = 25AQ3-CIass RDS(n) 154m trr 250ns(EIectricaIIy IsIated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432SymbI Test Cnditins Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VGVGSM Transient 40

9.4. Size:144K ixys
ixfr48n60p.pdf

IXFR 48N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 32 APower MOSFET RDS(on) 150 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 150 C 600 VE153432VDGR TJ

9.5. Size:115K ixys
ixfr40n90p.pdf

Preliminary Technical InformationPolarTM Power MOSFET VDSS = 900VIXFR40N90PID25 = 21AHiPerFETTM RDS(on) 230m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247E153432VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C, RGS = 1M 900 V

9.6. Size:153K ixys
ixfr44n50p.pdf

IXFR 44N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 24 APower MOSFET RDS(on) 150 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel EnhancementAvalanche RatedFast Intrinsic DiodeISOPLUS247 (IXFR)E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25

9.7. Size:101K ixys
ixfr44n80p.pdf

IXFR 44N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 25 APower MOSFET RDS(on) 200 m Electrically Isolated Tabtrr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 8

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