IXFR4N100Q Todos los transistores

 

IXFR4N100Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFR4N100Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 80 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 39 nC

Tiempo de elevación (tr): 200 nS

Resistencia drenaje-fuente RDS(on): 3 Ohm

Empaquetado / Estuche: ISOPLUS247

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IXFR4N100Q Datasheet (PDF)

1.1. ixfr4n100q.pdf Size:79K _ixys

IXFR4N100Q
IXFR4N100Q

HiPerFETTM Power MOSFETs VDSS =1000 V IXFR 4N100Q ID25 = 3.5 A ISOPLUS247TM ? RDS(on) = 3.0 ? ? ? ? (Electrically Isolated Backside) ? trr ? ? 200ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Con

5.1. ixfr40n50q2.pdf Size:117K _ixys

IXFR4N100Q
IXFR4N100Q

VDSS = 500V HiPerFETTM IXFR40N50Q2 ID25 = 29A Power MOSFET ? ? RDS(on) ? 170m? ? ? ? ? ? ? Q2-Class ? trr ? 250ns ? ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Continuous 30 V VGSM Tra

5.2. ixfr44n80p.pdf Size:101K _ixys

IXFR4N100Q
IXFR4N100Q

IXFR 44N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 25 A Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? Electrically Isolated Tab ? trr ? 250 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 30 V VGSM

 5.3. ixfr44n50p.pdf Size:153K _ixys

IXFR4N100Q
IXFR4N100Q

IXFR 44N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 24 A Power MOSFET ? ? RDS(on) ? 150 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 500 V VGS

5.4. ixfr48n60p.pdf Size:144K _ixys

IXFR4N100Q
IXFR4N100Q

IXFR 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 32 A Power MOSFET ? ? RDS(on) ? 150 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 600

 5.5. ixfr44n50q3.pdf Size:156K _ixys

IXFR4N100Q
IXFR4N100Q

Advance Technical Information HiperFETTM VDSS = 500V IXFR44N50Q3 Pסwer MOSFET ID25 = 25A Q3-CIass RDS(סn) 154m trr 250ns (EIectricaIIy IsסIated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 SymbסI Test Cסnditiסns Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1M 500 V VGSS Continuous 30 V G VGSM Transient 40

5.6. ixfr44n60.pdf Size:34K _ixys

IXFR4N100Q
IXFR4N100Q

HiPerFETTM Power MOSFETs IXFR 44N60 VDSS = 600 V ISOPLUS247TM ID25 = 38 A (Electrically Isolated Back Surface) RDS(on)= 130 mW Single MOSFET Die trr ? 250 ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C38 A G = Gate D = Drain IDM TC = 25

5.7. ixfr40n90p.pdf Size:115K _ixys

IXFR4N100Q
IXFR4N100Q

Preliminary Technical Information PolarTM Power MOSFET VDSS = 900V IXFR40N90P ID25 = 21A HiPerFETTM ? ? RDS(on) ? ? ? 230m? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 300ns ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 E153432 VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M? 900 V VGSS Continuous 30 V VGSM Tra

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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