IXFR4N100Q Datasheet and Replacement

HiPerFETTM Power MOSFETs VDSS =1000 VIXFR 4N100QID25 = 3.5 AISOPLUS247TMRDS(on) = 3.0 (Electrically Isolated Backside) trr 200ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary DataSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C;

HiPerFETTM Power MOSFETsIXFR 44N60 VDSS = 600 VISOPLUS247TMID25 = 38 A(Electrically Isolated Back Surface)RDS(on)= 130 mWSingle MOSFET Dietrr 250 nsISOPLUS 247TMSymbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C38 AG = Gate D = Drain

VDSS = 500VHiPerFETTM IXFR40N50Q2ID25 = 29APower MOSFET RDS(on) 170m Q2-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgLow intrinsic Rg, low trrISOPLUS247 (IXFR)E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 V

Advance Technical InformationHiperFETTM VDSS = 500VIXFR44N50Q3Pwer MOSFET ID25 = 25AQ3-CIass RDS(n) 154m trr 250ns(EIectricaIIy IsIated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432SymbI Test Cnditins Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VGVGSM Transient 40

IXFR 48N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 32 APower MOSFET RDS(on) 150 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 150 C 600 VE153432VDGR TJ

Preliminary Technical InformationPolarTM Power MOSFET VDSS = 900VIXFR40N90PID25 = 21AHiPerFETTM RDS(on) 230m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247E153432VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C, RGS = 1M 900 V

IXFR 44N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 24 APower MOSFET RDS(on) 150 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel EnhancementAvalanche RatedFast Intrinsic DiodeISOPLUS247 (IXFR)E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25

IXFR 44N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 25 APower MOSFET RDS(on) 200 m Electrically Isolated Tabtrr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 8