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IXFR4N100Q Spec and Replacement


   Type Designator: IXFR4N100Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: ISOPLUS247

 IXFR4N100Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFR4N100Q Specs

 ..1. Size:79K  ixys
 ixfr4n100q.pdf pdf_icon

IXFR4N100Q

HiPerFETTM Power MOSFETs VDSS =1000 V IXFR 4N100Q ID25 = 3.5 A ISOPLUS247TM RDS(on) = 3.0 (Electrically Isolated Backside) trr 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C;... See More ⇒

 9.1. Size:34K  ixys
 ixfr44n60.pdf pdf_icon

IXFR4N100Q

HiPerFETTM Power MOSFETs IXFR 44N60 VDSS = 600 V ISOPLUS247TM ID25 = 38 A (Electrically Isolated Back Surface) RDS(on)= 130 mW Single MOSFET Die trr 250 ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C38 A G = Gate D = Drain ... See More ⇒

 9.2. Size:117K  ixys
 ixfr40n50q2.pdf pdf_icon

IXFR4N100Q

VDSS = 500V HiPerFETTM IXFR40N50Q2 ID25 = 29A Power MOSFET RDS(on) 170m Q2-Class trr 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V ... See More ⇒

 9.3. Size:156K  ixys
 ixfr44n50q3.pdf pdf_icon

IXFR4N100Q

Advance Technical Information HiperFETTM VDSS = 500V IXFR44N50Q3 P wer MOSFET ID25 = 25A Q3-CIass RDS( n) 154m trr 250ns (EIectricaIIy Is Iated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symb I Test C nditi ns Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 30 V G VGSM Transient 40 ... See More ⇒

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Detailed specifications: IXFR40N90P , IXFR44N50P , IXFR44N50Q , IXFR44N60 , IXFR44N80P , IXFR48N50Q , IXFR48N60P , IXFR48N60Q3 , IRFP260N , IXFR64N50P , IXFR64N50Q3 , IXFR64N60P , IXFR64N60Q3 , IXFR66N50Q2 , IXFR70N15 , IXFR80N15Q , IXFR80N50P .

History: P2803BMG

Keywords - IXFR4N100Q MOSFET specs

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