IXFT120N15P Todos los transistores

 

IXFT120N15P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT120N15P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 600 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 120 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 150 nC

Tiempo de elevación (tr): 200 nS

Resistencia drenaje-fuente RDS(on): 0.016 Ohm

Empaquetado / Estuche: TO268

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IXFT120N15P Datasheet (PDF)

1.1. ixfh120n15p ixft120n15p.pdf Size:177K _ixys

IXFT120N15P
IXFT120N15P

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET ? ? RDS(on) ? 16 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? N-Channel Enhancement Mode ? Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VDSS Continuous 20 V D (TAB) VGSM Transi

2.1. ixfh120n25t ixft120n25t.pdf Size:180K _ixys

IXFT120N15P
IXFT120N15P

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T ≤ Ω RDS(on) ≤ Ω ≤ 23mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V TO-247

 4.1. ixft12n100qhv.pdf Size:148K _ixys

IXFT120N15P
IXFT120N15P

Advance Technical Information High Voltage HiPerFETTM VDSS = 1000V IXFT12N100QHV Power MOSFET ID25 = 12A ≤ Ω ≤ Ω Q-CLASS RDS(on) ≤ 1.05Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 1000 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V G = Ga

4.2. ixft10n100 ixft12n100.pdf Size:556K _ixys

IXFT120N15P
IXFT120N15P

VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS

 4.3. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

IXFT120N15P
IXFT120N15P

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

4.4. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

IXFT120N15P
IXFT120N15P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

Otros transistores... IXFR64N60Q3 , IXFR66N50Q2 , IXFR70N15 , IXFR80N15Q , IXFR80N50P , IXFR80N50Q3 , IXFR80N60P3 , IXFR90N30 , IRF150 , IXFT12N100F , IXFT12N50F , IXFT12N90Q , IXFT13N100 , IXFT140N10P , IXFT14N80P , IXFT150N17T2 , IXFT15N100Q .

 
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