IXFT120N15P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFT120N15P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 600 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO268

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IXFT120N15P Datasheet (PDF)

..1. Size:177K ixys
ixfh120n15p ixft120n15p.pdf

IXFH 120N15P VDSS = 150 VPolarHTTM HiPerFETIXFT 120N15P ID25 = 120 APower MOSFET RDS(on) 16 m trr 200 nsN-Channel Enhancement Mode Avalanche Energy RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDSS

6.1. Size:180K ixys
ixfh120n25t ixft120n25t.pdf

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 250VIXFT120N25TPower MOSFETs ID25 = 120AIXFH120N25T RDS(on) 23m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M 250 VTO-247

8.1. Size:53K ixys
ixfh12n90q ixft12n90q.pdf

IXFH 12N90Q VDSS = 900 VHiPerFETTMIXFT 12N90Q ID25 = 12 APower MOSFETsRDS(on) = 0.9 WQ ClassN-Channel Enhancement Modetrr 200 nsAvalanche RatedLow Qg, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM Transient 30 VID25 TC

8.2. Size:148K ixys
ixft12n100qhv.pdf

Advance Technical InformationHigh Voltage HiPerFETTMVDSS = 1000VIXFT12N100QHVPower MOSFETID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1000 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG = Ga

8.3. Size:144K ixys
ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

8.4. Size:556K ixys
ixft10n100 ixft12n100.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFT 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFT12 N100 1000 V 12 A 1.05 N-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Family trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 Case StyleVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150

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