IXFT120N15P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T RDS(on) 23m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M 250 V TO-247

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC

Advance Technical Information High Voltage HiPerFETTM VDSS = 1000V IXFT12N100QHV Power MOSFET ID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1000 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V G = Ga

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETs IXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS