IXFT15N100Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFT15N100Q3 Datasheet (PDF)

4.1. Size:116K ixys
ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf pdf_icon

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 WPower MOSFETsIXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 Wtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyPreliminary data sheetTO-247 ADSymbol Test Conditions Maximum Ratings(IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 V(TAB)VGS Continuous

7.1. Size:111K ixys
ixfh15n80q ixft15n80q.pdf pdf_icon

IXFH 15N80Q VDSS = 800 VHiPerFETTMIXFT 15N80Q ID25 = 15 APower MOSFETsRDS(on) = 0.60 WQ-Classtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID25 TC = 25C15 AIDM

8.1. Size:182K ixys
ixfh150n17t2 ixft150n17t2.pdf pdf_icon

Advance Technical InformationTrenchT2TM HiperFETTMVDSS = 175VIXFH150N17T2ID25 = 150APower MOSFETIXFT150N17T2 RDS(on) 12.0m trr 160nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 175 VGVDGR TJ = 25C to 175C, RG

8.2. Size:180K ixys
ixfh150n20t ixft150n20t.pdf pdf_icon

Advance Technical InformationTrenchTM HiperFETTM VDSS = 200VIXFT150N20TPower MOSFETs ID25 = 150AIXFH150N20T RDS(on) 15m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C, RGS = 1M 200 VTO-247 (IX

Otros transistores... IXFT12N100F , IXFT12N50F , IXFT12N90Q , IXFT13N100 , IXFT140N10P , IXFT14N80P , IXFT150N17T2 , IXFT15N100Q , AO3400 , IXFT16N120P , IXFT16N80P , IXFT16N90Q , IXFT18N90P , IXFT20N100P , IXFT20N80P , IXFT21N50 , IXFT21N50F .