IXFT30N40Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFT30N40Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 298 W
Tensión drenaje-fuente (Vds): 400 V
Corriente continua de drenaje (Id): 30 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 95 nC
Tiempo de elevación (tr): 250 nS
Resistencia drenaje-fuente RDS(on): 0.16 Ohm
Empaquetado / Estuche: TO268
Búsqueda de reemplazo de MOSFET IXFT30N40Q
IXFT30N40Q Datasheet (PDF)
3.1. ixft30n50q.pdf 
Size:109K _ixys
VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFH/IXFT 30N50Q 500 V 30 A 0.16 Ω Ω Ω Ω Ω IXFH/IXFT 32N50Q 500 V 32 A 0.15 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS =
3.2. ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf Size:110K _ixys
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr ? 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25C 30N
3.3. ixft30n60q.pdf Size:583K _ixys
IXFH 30N60Q VDSS = 600 V HiPerFETTM IXFT 30N60Q ID25 = 30 A Power MOSFETs Ω RDS(on) = 0.23 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V (TAB
3.4. ixfh30n50p ixft30n50p ixfv30n50p.pdf Size:320K _ixys
VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXFV 30N50P N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Conti
3.5. ixfh30n60p ixfv30n60p ixft30n60p.pdf Size:324K _ixys
IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXFV 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV 30N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V DS D (TAB) VGSS Conti
3.6. ixfh30n60x ixfq30n60x ixft30n60x.pdf Size:185K _ixys
Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V G VDGR TJ = 25C to 150
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
