IXFT30N40Q Todos los transistores

 

IXFT30N40Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFT30N40Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 298 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 250 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO268

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IXFT30N40Q Datasheet (PDF)

 7.1. Size:320K  ixys
 ixfh30n50p ixft30n50p ixfv30n50p.pdf pdf_icon

IXFT30N40Q

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to

 7.2. Size:110K  ixys
 ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf pdf_icon

IXFT30N40Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC

 7.3. Size:109K  ixys
 ixft30n50q.pdf pdf_icon

IXFT30N40Q

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFH/IXFT 30N50Q 500 V 30 A 0.16 IXFH/IXFT 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS =

 7.4. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf pdf_icon

IXFT30N40Q

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150

MOSTRAR MÁS

Otros transistores... IXFT21N50Q , IXFT24N50 , IXFT24N50Q , IXFT24N80P , IXFT24N90P , IXFT26N50 , IXFT26N60P , IXFT28N50F , AON7506 , IXFT30N50P , IXFT30N50Q3 , IXFT30N60P , IXFT320N10T2 , IXFT340N075T2 , IXFT36N50P , IXFT36N60P , IXFT400N075T2 .

 

 
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