IXFT30N40Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT30N40Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 298 W

Tensión drenaje-fuente (Vds): 400 V

Corriente continua de drenaje (Id): 30 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 95 nC

Tiempo de elevación (tr): 250 nS

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: TO268

Búsqueda de reemplazo de MOSFET IXFT30N40Q

IXFT30N40Q Datasheet (PDF)

3.1. ixft30n50q.pdf Size:109K _ixys

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFH/IXFT 30N50Q 500 V 30 A 0.16 Ω Ω Ω Ω Ω IXFH/IXFT 32N50Q 500 V 32 A 0.15 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS =

3.2. ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf Size:110K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr ? 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25�C to 150�C 500 V VDGR TJ = 25�C to 150�C; RGS = 1 MW 500 V VGS Continuous �20 V VGSM Transient �30 V D (TAB) ID25 TC = 25�C 30N

3.3. ixft30n60q.pdf Size:583K _ixys

IXFH 30N60Q VDSS = 600 V HiPerFETTM IXFT 30N60Q ID25 = 30 A Power MOSFETs Ω RDS(on) = 0.23 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V (TAB

3.4. ixfh30n50p ixft30n50p ixfv30n50p.pdf Size:320K _ixys

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXFV 30N50P N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25� C to 150� C 500 V D (TAB) VDGR TJ = 25� C to 150� C; RGS = 1 M? 500 V VGSS Conti

3.5. ixfh30n60p ixfv30n60p ixft30n60p.pdf Size:324K _ixys

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXFV 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV 30N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25� C to 150� C 600 V G VDGR TJ = 25� C to 150� C; RGS = 1 M? 600 V DS D (TAB) VGSS Conti

3.6. ixfh30n60x ixfq30n60x ixft30n60x.pdf Size:185K _ixys

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X   RDS(on)    155m     IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V G VDGR TJ = 25C to 150

Otros transistores... IXFT21N50Q , IXFT24N50 , IXFT24N50Q , IXFT24N80P , IXFT24N90P , IXFT26N50 , IXFT26N60P , IXFT28N50F , J112 , IXFT30N50P , IXFT30N50Q3 , IXFT30N60P , IXFT320N10T2 , IXFT340N075T2 , IXFT36N50P , IXFT36N60P , IXFT400N075T2 .

Liste

Recientemente añadidas las descripciónes de los transistores: