IXFT30N60P Todos los transistores

 

IXFT30N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFT30N60P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: TO268

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IXFT30N60P Datasheet (PDF)

 ..1. Size:324K  ixys
 ixfh30n60p ixfv30n60p ixft30n60p.pdf pdf_icon

IXFT30N60P

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement Mode IXFV 30N60PS trr 200 ns Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS

 5.1. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf pdf_icon

IXFT30N60P

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150

 5.2. Size:583K  ixys
 ixft30n60q.pdf pdf_icon

IXFT30N60P

IXFH 30N60Q VDSS = 600 V HiPerFETTM IXFT 30N60Q ID25 = 30 A Power MOSFETs RDS(on) = 0.23 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V (TAB

 7.1. Size:320K  ixys
 ixfh30n50p ixft30n50p ixfv30n50p.pdf pdf_icon

IXFT30N60P

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to

MOSTRAR MÁS

Otros transistores... IXFT24N80P , IXFT24N90P , IXFT26N50 , IXFT26N60P , IXFT28N50F , IXFT30N40Q , IXFT30N50P , IXFT30N50Q3 , TK10A60D , IXFT320N10T2 , IXFT340N075T2 , IXFT36N50P , IXFT36N60P , IXFT400N075T2 , IXFT42N50P2 , IXFT44N50P , IXFT50N30Q3 .

 

 
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