IXFT30N60P Datasheet. Specs and Replacement

Type Designator: IXFT30N60P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 82 nC

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO268

IXFT30N60P substitution

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IXFT30N60P datasheet

 ..1. Size:324K  ixys
 ixfh30n60p ixfv30n60p ixft30n60p.pdf pdf_icon

IXFT30N60P

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement Mode IXFV 30N60PS trr 200 ns Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS ... See More ⇒

 5.1. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf pdf_icon

IXFT30N60P

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150... See More ⇒

 5.2. Size:583K  ixys
 ixft30n60q.pdf pdf_icon

IXFT30N60P

IXFH 30N60Q VDSS = 600 V HiPerFETTM IXFT 30N60Q ID25 = 30 A Power MOSFETs RDS(on) = 0.23 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V (TAB... See More ⇒

 7.1. Size:320K  ixys
 ixfh30n50p ixft30n50p ixfv30n50p.pdf pdf_icon

IXFT30N60P

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to ... See More ⇒

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Detailed specifications: IXFT24N80P, IXFT24N90P, IXFT26N50, IXFT26N60P, IXFT28N50F, IXFT30N40Q, IXFT30N50P, IXFT30N50Q3, TK10A60D, IXFT320N10T2, IXFT340N075T2, IXFT36N50P, IXFT36N60P, IXFT400N075T2, IXFT42N50P2, IXFT44N50P, IXFT50N30Q3

Keywords - IXFT30N60P MOSFET specs

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