IXFT320N10T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 100VIXFH320N10T2ID25 = 320APower MOSFETIXFT320N10T2 RDS(on) 3.5m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXFH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-268

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC

IXFH 32N50Q VDSS ID25 RDS(on)HiPerFETTMIXFT 32N50QPower MOSFETs500 V 32 A 0.16 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 50

VDSS = 500 VIXFH 30N50PPolarHVTM HiPerFETID25 = 30 AIXFT 30N50PPower MOSFET RDS(on) 200 m IXFV 30N50PN-Channel Enhancement Modetrr 200 nsIXFV 30N50PSAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VD (TAB)VDGR TJ = 25 C to

VDSS ID25 RDS(on)HiPerFETTMPower MOSFETsIXFH/IXFT 30N50Q 500 V 30 A 0.16 IXFH/IXFT 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS =

Advance Technical InformationTrenchT2TM HiPerFETTM VDSS = 75VIXFH340N075T2ID25 = 340APower MOSFETIXFT340N075T2 RDS(on) 3.2m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (TAB)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSM Tra

IXFH 36N60P VDSS = 600 VPolarHVTM HiPerFETIXFK 36N60P ID25 = 36 APower MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT30N60XPower MOSFET ID25 = 30AIXFQ30N60X RDS(on) 155m IXFH30N60XTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VGVDGR TJ = 25C to 150

IXFH 36N50P VDSS = 500 VPolarHVTM HiPerFETIXFT 36N50P ID25 = 36 APower MOSFETIXFV 36N50P RDS(on) 170 m N-Channel Enhancement ModeIXFV 36N50PS trr 200 msAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS

IXFH 30N60Q VDSS = 600 VHiPerFETTMIXFT 30N60Q ID25 = 30 APower MOSFETsRDS(on) = 0.23 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 V(TAB

IXFH 30N60P VDSS = 600 VPolarHVTM HiPerFETIXFT 30N60P ID25 = 30 APower MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXFV 30N60PS trr 200 nsFast Recovery DiodeAvalanche RatedPLUS220 (IXFV)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS