IXFT320N10T2 - Даташиты. Аналоги. Основные параметры

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFH320N10T2 ID25 = 320A Power MOSFET IXFT320N10T2 RDS(on) 3.5m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V TO-268

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC

IXFH 32N50Q VDSS ID25 RDS(on) HiPerFETTM IXFT 32N50Q Power MOSFETs 500 V 32 A 0.16 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 50

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFH/IXFT 30N50Q 500 V 30 A 0.16 IXFH/IXFT 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS =

Advance Technical Information TrenchT2TM HiPerFETTM VDSS = 75V IXFH340N075T2 ID25 = 340A Power MOSFET IXFT340N075T2 RDS(on) 3.2m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (TAB) S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Tra

IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150

IXFH 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFT 36N50P ID25 = 36 A Power MOSFET IXFV 36N50P RDS(on) 170 m N-Channel Enhancement Mode IXFV 36N50PS trr 200 ms Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS

IXFH 30N60Q VDSS = 600 V HiPerFETTM IXFT 30N60Q ID25 = 30 A Power MOSFETs RDS(on) = 0.23 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V (TAB

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement Mode IXFV 30N60PS trr 200 ns Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS