IXFX180N25T Todos los transistores

 

IXFX180N25T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFX180N25T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1390 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0129 Ohm
   Paquete / Cubierta: PLUS247

 Búsqueda de reemplazo de MOSFET IXFX180N25T

 

Principales características: IXFX180N25T

 ..1. Size:138K  ixys
 ixfk180n25t ixfx180n25t.pdf pdf_icon

IXFX180N25T

Advance Technical Information GigaMOSTM VDSS = 250V IXFK180N25T ID25 = 180A Power MOSFET IXFX180N25T RDS(on) 12.9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V G VDGR TJ = 25 C to 150 C, RGS = 1M

 6.1. Size:46K  ixys
 ixfk180n085 ixfx180n085.pdf pdf_icon

IXFX180N25T

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 1

 6.2. Size:80K  ixys
 ixfk180n07 ixfx180n07.pdf pdf_icon

IXFX180N25T

IXFK 180N07 VDSS = 70 V HiPerFETTM IXFX 180N07 ID25 = 180 A Power MOSFETs RDS(on) = 6 m Single MOSFET Die trr 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 M 70 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 2

 6.3. Size:178K  ixys
 ixfk180n15p ixfx180n15p.pdf pdf_icon

IXFX180N25T

VDSS = 150 V IXFK 180N15P PolarTM HiPerFET ID25 = 180 A IXFX 180N15P Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDS Continuous 20 V TO

MOSTRAR MÁS

Otros transistores... IXFX120N25P , IXFX120N30T , IXFX140N25T , IXFX140N30P , IXFX160N30T , IXFX170N20P , IXFX170N20T , IXFX180N15P , K4145 , IXFX200N10P , IXFX20N120 , IXFX20N120P , IXFX21N100F , IXFX21N100Q , IXFX220N15P , IXFX220N17T2 , IXFX230N20T .

 

 
Back to Top

 


 
.