IXFX44N80P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: IXFX44N80P

..1. Size:233K ixys
ixfk44n80p ixfx44n80p.pdf pdf_icon

PolarTM IXFK44N80P VDSS = 800V HiperFETTM ID25 = 44A IXFX44N80P Power MOSFET RDS(on) 190m N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1M 800 V PLUS247 (IXFX) VGSS Continuous 30

7.1. Size:100K ixys
ixfx44n55q.pdf pdf_icon

Advance Technical Information IXFK 44N55Q VDSS = 550 V HiPerFETTM IXFX 44N55Q ID25 = 44 A Power MOSFETs RDS(on) = 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low t rr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150 C 550

7.2. Size:104K ixys
ixfx44n60 ixfk44n60.pdf pdf_icon

HiPerFETTM IXFX 44N60 VDSS = 600 V IXFK 44N60 ID25 = 44 A Power MOSFETs RDS(on) = 130 mW Single MOSFET Die trr 250 ns PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C44 A TO-264 AA (IXFK) IDM TC = 25 C, pulse width limite

7.3. Size:126K ixys
ixfx44n50f ixfk44n50f.pdf pdf_icon

HiPerRFTM VDSS = 500V IXFK44N50F ID25 = 44A Power MOSFETs IXFX44N50F RDS(on) 120m F-Class MegaHertz Switching trr 250ns Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C