IXFX44N80P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PolarTMIXFK44N80P VDSS = 800VHiperFETTMID25 = 44AIXFX44N80PPower MOSFET RDS(on) 190m N-Channel Enhancement ModeTO-264 (IXFK)Avalanche RatedFast Intrinsic DiodeGDSSymbol Test Conditions Maximum RatingsTabVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C, RGS = 1M 800 VPLUS247 (IXFX)VGSS Continuous 30

Advance Technical InformationIXFK 44N55QVDSS = 550 VHiPerFETTMIXFX 44N55QID25 = 44 APower MOSFETsRDS(on) = 120 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low QgPLUS 247TM (IXFX)High dV/dt, Low trrSymbol Test Conditions Maximum Ratings(TAB)GDVDSS TJ = 25C to 150C 550

HiPerFETTM IXFX 44N60 VDSS = 600 VIXFK 44N60 ID25 = 44 APower MOSFETsRDS(on) = 130 mWSingle MOSFET Dietrr 250 nsPLUS 247TM (IXFX)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C44 ATO-264 AA (IXFK)IDM TC = 25C, pulse width limite

HiPerRFTM VDSS = 500VIXFK44N50FID25 = 44APower MOSFETsIXFX44N50F RDS(on) 120m F-Class: MegaHertz Switchingtrr 250nsSingle MOSFET DieTO-264 (IXFK)N-Channel Enhancement ModeAvalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrGDTabSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C

VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 48N50Q 500 V 48 A 100 mPower MOSFETsIXFK/IXFX 44N50Q 500 V 44 A 120 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low QgPLUS 247TM (IXFX)High dV/dt, Low trrSymbol Test Conditions Maximum Ratings (TAB)GDVDSS TJ = 25C to 150