IXFX66N50Q2 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: IXFX66N50Q2

9.1. Size:169K ixys
ixfk64n60p ixfx64n60p.pdf pdf_icon

IXFK 64N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 64N60P ID25 = 64 A Power MOSFET RDS(on) 96 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Contin

9.2. Size:225K ixys
ixfk64n50p ixfx64n50p.pdf pdf_icon

IXFK 64N50P VDSS = 500 V PolarHVTM HiPerFET IXFX 64N50P ID25 = 64 A Power MOSFET RDS(on) 85 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo

9.3. Size:346K inchange semiconductor
ixfx64n50q3.pdf pdf_icon

isc N-Channel MOSFET Transistor IXFX64N50Q3 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

Otros transistores... IXFX55N50F , IXFX60N55Q2 , IXFX62N25 , IXFX64N50P , IXFX64N50Q3 , IXFX64N60P , IXFX64N60P3 , IXFX64N60Q3 , K2611 , IXFX73N30Q , IXFX74N50P2 , IXFX78N50P3 , IXFX80N50P , IXFX80N50Q3 , IXFX80N60P3 , IXFX88N20Q , IXFX94N50P2 .