IXFX66N50Q2 Datasheet. Specs and Replacement
Type Designator: IXFX66N50Q2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 735 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: PLUS247
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IXFX66N50Q2 substitution
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IXFX66N50Q2 datasheet
ixfk64n60p ixfx64n60p.pdf
IXFK 64N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 64N60P ID25 = 64 A Power MOSFET RDS(on) 96 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Contin... See More ⇒
ixfk64n50p ixfx64n50p.pdf
IXFK 64N50P VDSS = 500 V PolarHVTM HiPerFET IXFX 64N50P ID25 = 64 A Power MOSFET RDS(on) 85 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo... See More ⇒
ixfx64n50q3.pdf
isc N-Channel MOSFET Transistor IXFX64N50Q3 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
Detailed specifications: IXFX55N50F, IXFX60N55Q2, IXFX62N25, IXFX64N50P, IXFX64N50Q3, IXFX64N60P, IXFX64N60P3, IXFX64N60Q3, K2611, IXFX73N30Q, IXFX74N50P2, IXFX78N50P3, IXFX80N50P, IXFX80N50Q3, IXFX80N60P3, IXFX88N20Q, IXFX94N50P2
Keywords - IXFX66N50Q2 MOSFET specs
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History: IXFX64N50P
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