IXTA06N120P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTA06N120P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 13.3 nC
   trⓘ - Tiempo de subida: 900 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 34 Ohm
   Paquete / Cubierta: TO263

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IXTA06N120P Datasheet (PDF)

9.1. Size:177K ixys
ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -

9.2. Size:270K ixys
ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ

9.3. Size:186K ixys
ixta08n100d2hv.pdf

Advance Technical InformationHigh Voltage VDSX = 1000VIXTA08N100D2HVDepletion Mode ID(on) > 800mAMOSFET RDS(on) 21 N-ChannelTO-263HVGSSymbol Test Conditions Maximum Ratings D (Tab)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C, RGS = 1M 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = Drain

9.4. Size:201K ixys
ixta02n450hv ixtt02n450hv.pdf

Advance Technical InformationHigh Voltage VDSS = 4500VIXTA02N450HVPower MOSFETsID25 = 200mAIXTT02N450HV RDS(on) 750 N-Channel Enhancement ModeTO-263 (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VTO-268 (IXTT)VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VGVGSM Trans

9.5. Size:184K ixys
ixta02n250hv.pdf

Advance Technical InformationHigh VoltageIXTA02N250HVVDSS = 2500VPower MOSFETID25 = 200mA RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263ABGS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 2500 VS = Source Tab = DrainVGSS

9.6. Size:185K ixys
ixta05n100hv.pdf

VDSS = 1000VIXTA05N100HVHigh VoltageID25 = 750mAIXTA05N100Power MOSFET RDS(on) 17 IXTP05N100N-Channel Enhancement ModeTO-263HV (IXTA)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 30 V GS

9.7. Size:177K ixys
ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY08N50D2MOSFET ID(on) > 800mAIXTA08N50D2 RDS(on) 4.6 IXTP08N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ - 55

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